Method of making wafer having top and bottom emitting vertical-cavity lasers

A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of...

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Bibliographic Details
Main Authors GOOSSEN KEITH WAYNE, TSENG BETTY JYUE, HUI SANGHEE PARK, CHIROVSKY LEO MARIA, CUNNINGHAM JOHN EDWARD
Format Patent
LanguageEnglish
Published 26.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.
Bibliography:Application Number: US20010769024