Method of manufacturing embedded organic stop layer for dual damascene patterning

A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or...

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Main Authors ZHOU MEI SHENG, XU YI, ALIYU YAKUB, HO PAUL KWOK KEUNG, CHOOI SIMON, SUDIJONO JOHN LEONARD, ROY SUDIPTO RANENDRA, GUPTA SUBHASH
Format Patent
LanguageEnglish
Published 05.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.
Bibliography:Application Number: US20000636579