Composition for positive photoresist

A photoresist composition is provided. The photoresist composition includes a polymer resin for forming a photoresist layer, a photosensitive chemical for changing solubility of the photoresist layer when exposed to some form of radiation, and 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone...

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Bibliographic Details
Main Authors JU JIN-HO, KIM KI-SOO, KANG SUNGUL, NAH YUN-JUNG, PARK HONG-SIK, LEE YU-KYUNG
Format Patent
LanguageEnglish
Published 08.10.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Summary:A photoresist composition is provided. The photoresist composition includes a polymer resin for forming a photoresist layer, a photosensitive chemical for changing solubility of the photoresist layer when exposed to some form of radiation, and 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone as a solvent. The composition has a good photosensitivity and remainder ratio, and no unpleasant odor.
Bibliography:Application Number: US20000651114