Field effect transistor and method of fabricating the same

There is provided a field effect transistor including a semi-insulating semiconductor substrate formed with a recess at a region in which a gate is to be formed, a gate base layer formed on the recess and composed of one of an InP layer and a plurality of layers including an InP layer, and a gate el...

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Bibliographic Details
Main Author ONDA KAZUHIKO
Format Patent
LanguageEnglish
Published 10.09.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a field effect transistor including a semi-insulating semiconductor substrate formed with a recess at a region in which a gate is to be formed, a gate base layer formed on the recess and composed of one of an InP layer and a plurality of layers including an InP layer, and a gate electrode formed on the gate base layer. The InP layer may be replaced with an InGaP layer, an AlXGa1-XAs (0<=X<=1) layer, an InXGa1-XAs (0<=X<=1) layer, or an InXAl1-XAs (0<=X<0.4 or 0.6<X<=1) layer. The above-mentioned field effect transistor prevents thermal instability thereof caused by impurities such as fluorine entering a donor layer to thereby inactivate donor. As a result, there is presented a highly reliable compound field effect transistor.
Bibliography:Application Number: US20000667231