Pattern formation material and method
A resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light is applied on a substrate, thereby forming a resist film. The resist film is...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
03.09.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light is applied on a substrate, thereby forming a resist film. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and is developed with an alkaline developer after the pattern exposure, thereby forming a resist pattern. |
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Bibliography: | Application Number: US20000523192 |