Method to create copper traps by modifying treatment on the dielectrics surface

A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. T...

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Main Authors ZHOU MEI SHENG, XU YI, ALIYU YAKUB, SUDIJONO JOHN, CHOOI SIMON, HO PAUL KWOK KEUNG, ROY SUDIPTO RANENDRA, GUPTA SUBHASH
Format Patent
LanguageEnglish
Published 06.08.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.
Bibliography:Application Number: US20000619018