PECVD of Ta films from tanatalum halide precursors
A plasma enhanced chemical vapor deposition (PECVD) method for depositing high quality conformal tantalum (Ta) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tant...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
02.07.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A plasma enhanced chemical vapor deposition (PECVD) method for depositing high quality conformal tantalum (Ta) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta film on a substrate that is heated to 300° C.-500° C. The deposited Ta film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD. |
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Bibliography: | Application Number: US19990300583 |