Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

An electrode structure for a semiconductor device and a method for forming the electrode structure, and a mounted body including the semiconductor device are provided in which the semiconductor device can be easily connected to a circuit board with high reliability. An aluminum electrode is formed o...

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Bibliographic Details
Main Author BESSHO YOSHIHIRO
Format Patent
LanguageEnglish
Published 14.05.2002
Edition7
Subjects
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Summary:An electrode structure for a semiconductor device and a method for forming the electrode structure, and a mounted body including the semiconductor device are provided in which the semiconductor device can be easily connected to a circuit board with high reliability. An aluminum electrode is formed on an IC substrate. A passivation film is formed on the IC substrate so as to cover the peripheral portion of the aluminum electrode. A bump electrode is formed on the aluminum electrode by a wire bonding method. An aluminum oxide film is formed on the surface of the aluminum electrode that is exposed around the bump electrode. A conductive adhesive is applied as a bonding layer to the tip portion of the bump electrode of the semiconductor device by a transfer method or a printing method. The semiconductor device is aligned in the face-down state in such a manner that the bump electrode abuts on a terminal electrode of a circuit board, and is provided on a circuit board. In this state, the conductive adhesive is hardened. A gap between the IC substrate and the circuit board is filled with an insulating resin.
Bibliography:Application Number: US19980197334