Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD

• Main Authors: HATANAKA YOSHINORI, TAMAMAKI HIROAKI, NOMURA MASAYA, SANO KEIICHIRO
• Format: Patent
• Language: English
• Published: 16.04.2002
• Edition: 7
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; WORKING-UP

A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.