Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom

A method of fabricating ion implanted doping layers in semiconductor materials by subjecting the material to an ultrasonic treatment during the implantation of predetermined impurities. In an alternate embodiment ultrasonic vibrations are generated by primary ion currents of sufficient density refle...

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Bibliographic Details
Main Authors KURPS RAINER, KRUEGER DIETMAR, ROMANJUK BORIS, OLICH JAROSLAV, MELNIK VIKTOR
Format Patent
LanguageEnglish
Published 19.03.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating ion implanted doping layers in semiconductor materials by subjecting the material to an ultrasonic treatment during the implantation of predetermined impurities. In an alternate embodiment ultrasonic vibrations are generated by primary ion currents of sufficient density reflected by a piezo-electric element applied to the semiconductor material.
Bibliography:Application Number: US20000549103