Modified gate conductor processing for poly length control in high density DRAMS

• Main Authors: DIVAKARUNI RAMACHANDRA, WEYBRIGHT MARY E
• Format: Patent
• Language: English
• Published: 12.02.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a semiconductor substrate having an oxide layer thereon. A gate conductor is provided on the oxide layer, the gate conductor including a layer of polysilicon on the oxide layer, a tungsten silicide layer on the polysilicon layer, and a nitride cap layer on the tungste...