Modified gate conductor processing for poly length control in high density DRAMS

A semiconductor device includes a semiconductor substrate having an oxide layer thereon. A gate conductor is provided on the oxide layer, the gate conductor including a layer of polysilicon on the oxide layer, a tungsten silicide layer on the polysilicon layer, and a nitride cap layer on the tungste...

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Bibliographic Details
Main Authors DIVAKARUNI RAMACHANDRA, WEYBRIGHT MARY E
Format Patent
LanguageEnglish
Published 12.02.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate having an oxide layer thereon. A gate conductor is provided on the oxide layer, the gate conductor including a layer of polysilicon on the oxide layer, a tungsten silicide layer on the polysilicon layer, and a nitride cap layer on the tungsten silicide layer. The polysilicon layer has a length greater than length of the silicide layer and the nitride layer. Dielectric spacers on the gate conductor overlay the nitride cap layer and the tungsten silicide layer to provide a sidewall substantially flush with the polysilicon layer. Exposed polysilicon on the polysilicon layer is oxidized.
Bibliography:Application Number: US19990325942