Method for minimizing the temperature coefficient of resistance of passive resistors in an integrated circuit process flow

An integrated circuit containing a resistor and the resistor per se. The circuit includes a substrate (2), a semiconductor resistor (3) on the substrate and a layer of electrically insulating material (5) disposed over the substrate and the semiconductor resistor having at least one contact (11, 13,...

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Bibliographic Details
Main Authors BALDWIN GREG C, TSAO ALWIN J
Format Patent
LanguageEnglish
Published 25.12.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit containing a resistor and the resistor per se. The circuit includes a substrate (2), a semiconductor resistor (3) on the substrate and a layer of electrically insulating material (5) disposed over the substrate and the semiconductor resistor having at least one contact (11, 13, 15) extending therethrough to the semiconductor resistor, the contact having an electrical path therein extending to and forming an interface with an end portion of the semiconductor resistor. The semiconductor resistor has a semiconductor resistor body, preferably of doped polysilicon, having one of a positive or negative temperature coefficient of resistance and a resistor head. The resistor head consists essentially of the electrical path which is metal interconnect, the contacts and then interface to and from the resistor body and in contact with the resistor body, the resistor head having the other of a positive or negative temperature coefficient of resistance.
Bibliography:Application Number: US20000729686