MNOS-type memory using single electron transistor and driving method thereof
A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are pr...
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| Main Authors | , , , , |
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| Format | Patent |
| Language | English |
| Published |
06.11.2001
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (DELTAVth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate. |
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| AbstractList | A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (DELTAVth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate. |
| Author | ROH HYUNG-LAE YOON SEOK-YEOL KIM BYONG-MAN KIM MOON-KYUNG LEE JO-WON |
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| Snippet | A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | MNOS-type memory using single electron transistor and driving method thereof |
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