MNOS-type memory using single electron transistor and driving method thereof

A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are pr...

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Bibliographic Details
Main Authors KIM BYONG-MAN, YOON SEOK-YEOL, ROH HYUNG-LAE, KIM MOON-KYUNG, LEE JO-WON
Format Patent
LanguageEnglish
Published 06.11.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (DELTAVth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate.
Bibliography:Application Number: US20000599225