Circuit with non-volatile memory and method of erasing the memory a number of bits at a time
The threshold of a number of storage transistors is shifted in steps. After such a step, a collective current through the main current channels of a number of these storage transistors is sensed. The same gate-source voltage is applied to all these transistors during sensing. The collective current...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
14.08.2001
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The threshold of a number of storage transistors is shifted in steps. After such a step, a collective current through the main current channels of a number of these storage transistors is sensed. The same gate-source voltage is applied to all these transistors during sensing. The collective current indicates whether the threshold of all transistors has been sufficiently shifted. If not, a further threshold shifting step is applied. |
---|---|
Bibliography: | Application Number: US20000656834 |