System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure...

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Bibliographic Details
Main Author BABIC DUBRAVKO I
Format Patent
LanguageEnglish
Published 22.05.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Summary:A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser and the heterojunction phototransistor.
Bibliography:Application Number: US19980183030