Semiconductor device having buried boron and carbon regions

To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations.For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 mum is formed...

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Bibliographic Details
Main Authors ISHIDA HIDETSUGU, ISOMAE SEIICHI
Format Patent
LanguageEnglish
Published 06.03.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations.For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 mum is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
Bibliography:Application Number: US19980024661