Micromechanical switching devices

A micromechanical switch or relay in accordance with the invention includes a substrate, a source electrode, a gate electrode, a drain electrode, and various style beams. In one embodiment the beam is relatively long and includes flexures on at least one end, and has a small activation voltage. Addi...

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Bibliographic Details
Main Authors ZAVRACKY; PAUL M, MCGRUER; NICOL E
Format Patent
LanguageEnglish
Published 28.11.2000
Edition7
Subjects
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Summary:A micromechanical switch or relay in accordance with the invention includes a substrate, a source electrode, a gate electrode, a drain electrode, and various style beams. In one embodiment the beam is relatively long and includes flexures on at least one end, and has a small activation voltage. Additional embodiments include a relay wherein the beam has an insulator and an isolated contactor wherein the interface between the beam and the insulator is more mechanically robust by having the insulator fill recesses in the end of the beam; a switch or relay wherein the drain contacts are collinear with the source contacts so that the strain gradient of the mechanical material does not affect performance of the device; a snap action switch in which the beam acts a leaf spring such that an initial voltage places the beam close to the contact, and a small additional voltage results in a large beam force for closing the switch contact; a switch or relay wherein the beam includes a hinge and is therefore more easily deflectable; and a single pole double throw switch or relay wherein the beam is deflectable in a first direction to provide a first connection and also deflectable in a second direction to provide a second connection. The switches and relays can be ganged together in order to switch high currents, and can be fabricated to have a single large beam, a single large gate contact, a single large source contact, a single large drain contact, or combinations thereof. Additionally, the switches and relays can be used to form logic circuits such as NAND gates, NOR gates, inverters and the like.
Bibliography:Application Number: US19980177229