Method for forming low compressive stress fluorinated ozone/TEOS oxide film
A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5x108 dynes/cm2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between abo...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
19.09.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5x108 dynes/cm2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer. |
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Bibliography: | Application Number: US19970957058 |