Method of contacting a silicide-based schottky diode

A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicid...

Full description

Saved in:
Bibliographic Details
Main Authors SCHMIDT; NICHOLAS THEODORE, DUNN; JAMES STUART, KIEFT, III; KENNETH KNETCH, GRAY; PETER BRIAN, ST. ONGE; STEPHEN
Format Patent
LanguageEnglish
Published 19.09.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.
Bibliography:Application Number: US19990312945