Method of fabricating an integrated complex-transition metal oxide device

A method for the fabrication complex-transition metal oxide (CTMO)/semiconductor or dielectric substrate integrated devices includes the separation of the CTMO film growth process from the CTMO-film/semiconductor or dielectric substrate integration process. The CTMO-film is transferred from the nati...

Full description

Saved in:
Bibliographic Details
Main Authors ZAVRACKY; PAUL, OLIVER; STEVEN A, VITTORIA; CARMINE, MCGRUER; NICOL E
Format Patent
LanguageEnglish
Published 05.09.2000
Edition7
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
Online AccessGet full text

Cover

More Information
Summary:A method for the fabrication complex-transition metal oxide (CTMO)/semiconductor or dielectric substrate integrated devices includes the separation of the CTMO film growth process from the CTMO-film/semiconductor or dielectric substrate integration process. The CTMO-film is transferred from the native substrate to the final substrate for fabrication into devices. The CTMO-film is grown onto a native substrate under growth conditions chosen to provide a CTMO-film having desirable properties and thickness. No restrictions are placed upon the native substrate used, the growth method used, or on the growth conditions required. The CTMO-film is then joined to the semiconductor or dielectric substrate and the native substrate is removed, providing the basis for an integrated electronics, photonics, or MEMS device. Techniques fully compatible with semiconductor processing can be used to fabricate monolithically integrated CTMO/semiconductor devices in a first embodiment.
Bibliography:Application Number: US19970818106