Wide dynamic range RF mixers using wide bandgap semiconductors

A wide dynamic range RF mixer is shown using wide bandgap semiconductors such as SiC, GaN, AlGaN, or Diamond instead of conventional narrow bandgap semiconductors. The use of wide bandgap semiconductors will permit RF mixers to operate in higher RF environments, to be less susceptible to out-of-band...

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Bibliographic Details
Main Authors FAZI; CHRISTIAN, NEUDECK; PHILIP G
Format Patent
LanguageEnglish
Published 29.08.2000
Edition7
Subjects
BASIC ELECTRONIC CIRCUITRY
DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TOANOTHER
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRICITY
TRANSMISSION
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Summary:A wide dynamic range RF mixer is shown using wide bandgap semiconductors such as SiC, GaN, AlGaN, or Diamond instead of conventional narrow bandgap semiconductors. The use of wide bandgap semiconductors will permit RF mixers to operate in higher RF environments, to be less susceptible to out-of-band jamming and interference, and to be more effective in receiving weak RF signals in the presence of strong unwanted signals. RF receivers can be more closely collocated to transmitters and still receive weak signals without suffering intermodulation distortion products
Bibliography:Application Number: US19970803887