High planarity high-density in-laid metallization patterns by damascene-CMP processing

Erosion of high density metallization areas associated with conventional damascene-CMP processing is avoided and greater planarity achieved by selectively increasing the metal overburden layer thickness at high density metallization regions. Embodiments include initially filling recesses formed in t...

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Bibliographic Details
Main Author ERB; DARRELL M
Format Patent
LanguageEnglish
Published 22.08.2000
Edition7
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
METALLURGY
PRINTED CIRCUITS
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:Erosion of high density metallization areas associated with conventional damascene-CMP processing is avoided and greater planarity achieved by selectively increasing the metal overburden layer thickness at high density metallization regions. Embodiments include initially filling recesses formed in the substrate surface with a metal forming a blanket or overburden layer of the metal thereon. Regions of the blanket or overburden layer overlying regions of high density metallization are selectively electroplated to a greater thickness. The surface is then planarized by CMP, with the selectively increased thickness areas of the overburden layer compensating for greater erosion rates thereat during CMP, thereby resulting in greater planarity of the polished surface.
Bibliography:Application Number: US19990238051