Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication

• Main Authors: ABROKWAH; JONATHAN KWADWO, YU; ZHIYI JIMMY, PASSLACK; MATTHIAS
• Format: Patent
• Language: English
• Published: 25.07.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

An electro-conductive ultraviolet light transmitting Ga2O3 material (10) with a metallic oxide phase is deposited on a GaAs substrate or supporting structure (12). The Ga2O3 material or thin layer comprises a minor component of metallic IrO2. The Ga2O3 thin layer may be positioned using thermal evaporation (106) of Ga2O3 or of a Ga2O3 containing a compound from an Iridium crucible (108). Alternatively, the Ir may be co-evaporated (110) by electron beam evaporation. The electro-conductive ultraviolet light transmitting material Ga2O3 with a metallic oxide phase is suitable for use on solar cells and in laser lithography.