Semiconductor device having a cavity and method of making
A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as p...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
11.07.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10). |
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Bibliography: | Application Number: US19970997615 |