High voltage pump circuit with reduced oxide stress
Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such th...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
06.06.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current. |
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Bibliography: | Application Number: US19980008619 |