High voltage pump circuit with reduced oxide stress

Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such th...

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Bibliographic Details
Main Authors FIESTER; MARK, COSTELLO; JOHN, TRAN; STEPHANIE, LIN; GUU, HUNG; CHUAN-YUNG
Format Patent
LanguageEnglish
Published 06.06.2000
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current.
Bibliography:Application Number: US19980008619