Product wafer junction leakage measurement using light and eddy current

A method for measuring junction leakage in a semiconductor product wafer while applying varying light to the wafer. A surface photovoltage characteristic for the wafer and an eddy current characteristic for the wafer in response to the light are measured. A junction leakage characteristic for at lea...

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Bibliographic Details
Main Author VERKUIL; ROGER L
Format Patent
LanguageEnglish
Published 06.06.2000
Edition7
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A method for measuring junction leakage in a semiconductor product wafer while applying varying light to the wafer. A surface photovoltage characteristic for the wafer and an eddy current characteristic for the wafer in response to the light are measured. A junction leakage characteristic for at least one of junction types is determined by simultaneously measuring the surface photovoltage and the induced eddy current characteristics in response to a light flash.
Bibliography:Application Number: US19970902869