Method of manufacturing a semiconductor integrated circuit device

A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the gro...

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Main Authors IKEDA; SHUJI, NOZOE; TOSHIO, YOSHIDA; YASUKO, MIURA; HIDEO, KOBAYASHI; MASAMICHI, MATSUDA; YASUSHI, YAMAMOTO; HIROHIKO, TAKAMATSU; AKIRA, SHIMIZU; HIROFUMI, SUZUKI; NORIO, HORIBE; SHINICHI, FUKUDA; KAZUSHI
Format Patent
LanguageEnglish
Published 02.05.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000 DEG C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp<Tr</=3Tp)
Bibliography:Application Number: US19980066757