Combined dry and wet etch for improved silicide formation
A method of removing an outer layer from an inner surface during semiconductor fabrication. A portion of the outer layer (50) may be anisotropically etched. A remaining portion of the outer layer (55) may then be wet etched without impairing the inner surface (12).
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
04.04.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of removing an outer layer from an inner surface during semiconductor fabrication. A portion of the outer layer (50) may be anisotropically etched. A remaining portion of the outer layer (55) may then be wet etched without impairing the inner surface (12). |
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Bibliography: | Application Number: US19970957171 |