Combined dry and wet etch for improved silicide formation

A method of removing an outer layer from an inner surface during semiconductor fabrication. A portion of the outer layer (50) may be anisotropically etched. A remaining portion of the outer layer (55) may then be wet etched without impairing the inner surface (12).

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Bibliographic Details
Main Authors HONG; QI-ZHONG, HSIA; SHOULI
Format Patent
LanguageEnglish
Published 04.04.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of removing an outer layer from an inner surface during semiconductor fabrication. A portion of the outer layer (50) may be anisotropically etched. A remaining portion of the outer layer (55) may then be wet etched without impairing the inner surface (12).
Bibliography:Application Number: US19970957171