Vacuum envelope device having niobium oxide gate electrode structure

• Main Authors: OCHIAI; HISATAKA, INUKAI; TSUYOSHI, TOMITA; MASAHARU, ITOH; SHIGEO
• Format: Patent
• Language: English
• Published: 21.09.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

A vacuum envelope with a built-in electron source capable of preventing peeling of gate electrodes, to thereby enhance reliability in operation over a long period of time and reducing a manufacturing cost thereof. The gate electrodes each are made of niobium oxide or niobium nitride. Nb for the gate electrode is previously oxidized or nitrided to prevent progress of oxidation of the gate electrode due to release of oxygen from lead oxide contained in a seal material during heating for sealing, resulting in expansion of the gate electrode. An insulating layer is formed on a cathode substrate and the gate electrodes are formed on the insulating layer. Then, the seal material is applied onto the insulating layer so as to cover a part of each of the gate electrodes, so that the cathode substrate may be sealedly joined to an anode substrate.