Method for fabricating a semiconductor diode with BCD technology

A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region having a first type of conductivity and a catho...

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Bibliographic Details
Main Authors MASTROMATTEO; UBALDO, GALBIATI; PAOLA
Format Patent
LanguageEnglish
Published 17.08.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region having a first type of conductivity and a cathode region having a second type of conductivity. The cathode region comprises an epitaxial layer located above the buried anode region and a highly doped region provided inside the epitaxial layer. The buried anode region comprises depressions opposite which is located the highly doped region with the depressions being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region.
Bibliography:Application Number: US19960725590