Method for fabricating capacitors of a dynamic random access memory

• Main Author: CHIEN; SUNIEH
• Format: Patent
• Language: English
• Published: 19.01.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and covering the isolation layer with conductive layer; performing an etching process on the conductive layer by using photoresist and low-temperature spacer as mask; again performing an etching process on the conductive layer, to a desired depth by controlling the etching time and using the low-temperature spacer as mask; removing the low-temperature spacer for finally forming the lower electrode of a cylindrical capacitor.