Method for fabricating capacitors of a dynamic random access memory

A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and co...

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Bibliographic Details
Main Author CHIEN; SUNIEH
Format Patent
LanguageEnglish
Published 19.01.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and covering the isolation layer with conductive layer; performing an etching process on the conductive layer by using photoresist and low-temperature spacer as mask; again performing an etching process on the conductive layer, to a desired depth by controlling the etching time and using the low-temperature spacer as mask; removing the low-temperature spacer for finally forming the lower electrode of a cylindrical capacitor.
Bibliography:Application Number: US19980085490