Method for fabricating capacitors of a dynamic random access memory
A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and co...
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Main Author | |
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Format | Patent |
Language | English |
Published |
19.01.1999
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and covering the isolation layer with conductive layer; performing an etching process on the conductive layer by using photoresist and low-temperature spacer as mask; again performing an etching process on the conductive layer, to a desired depth by controlling the etching time and using the low-temperature spacer as mask; removing the low-temperature spacer for finally forming the lower electrode of a cylindrical capacitor. |
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Bibliography: | Application Number: US19980085490 |