Quinonediazide/novolak positive electron beam resist developer

• Main Authors: KANETSUKI; SHIGEYOSHI, TAMURA; KAZUTAKA, ASANO; MASAYA, OOSEDO; HIROKI, KATAOKA MUTSUO
• Format: Patent
• Language: English
• Published: 22.12.1998
• Edition: 6
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A developer for quinonediazide/novlak positive electron beam resists including alkali metal ions, weak acid ions and a water soluble organic compound subject to the following conditions: 0.05</=a</=0.5, 0.07</=bn</=1.5 and a<bn or a>bn, wherein a is the concentration of the alkali metal in mol/kg, b is the concentration of the weak acid in mol/kg and n is the valence of the weak acid ions, and the concentration of the water soluble organic compound is 0.5 to 10 wt %, based on the total weight of the developer.