Method for fabricating a storage electrode without polysilicon bridge and undercut
A method for fabricating a storage electrode is designed to avoid the problems of polysilicon bridge and undercut. First, a substrate having a transistor is provided. An insulating layer is then deposited over the substrate. A contact hole is then formed in the insulating layer down to the source/dr...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
19.05.1998
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| Edition | 6 |
| Subjects | |
| Online Access | Get full text |
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| Summary: | A method for fabricating a storage electrode is designed to avoid the problems of polysilicon bridge and undercut. First, a substrate having a transistor is provided. An insulating layer is then deposited over the substrate. A contact hole is then formed in the insulating layer down to the source/drain region of the transistor. A thin polysilicon layer is then deposited and further patterned at least at the periphery of the contact hole and on the upper surface of the source/drain region. Finally, an anisotropical epitaxial polysilicon layer is formed on the upper surface of the first polysilicon layer. |
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| Bibliography: | Application Number: US19970790793 |