Gate turn-off thyristor for high blocking voltage and small component thickness

• Main Authors: EICHER; SIMON, BAUER; FRIEDHELM
• Format: Patent
• Language: English
• Published: 20.01.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combina...