Gate turn-off thyristor for high blocking voltage and small component thickness

A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combina...

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Bibliographic Details
Main Authors EICHER; SIMON, BAUER; FRIEDHELM
Format Patent
LanguageEnglish
Published 20.01.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combination of the barrier layer, the transparent anode emitter and the anode short-circuits, a GTO is obtained which can be operated at high switching frequencies, the substrate thickness of which can be reduced and which nevertheless exhibits no increase in the switching losses.
Bibliography:Application Number: US19950495080