Bonding pad structure and method thereof

A structure and a process for forming an improved bonding pad which resists bond pad peeling of between the bonding pad layer and the underlying layers. The method comprises forming plurality of anchor pads on said substrate surface in a bonding pad area. Next, a first insulating layer is formed ove...

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Bibliographic Details
Main Author HSIAO; MING-SHAN
Format Patent
LanguageEnglish
Published 13.01.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure and a process for forming an improved bonding pad which resists bond pad peeling of between the bonding pad layer and the underlying layers. The method comprises forming plurality of anchor pads on said substrate surface in a bonding pad area. Next, a first insulating layer is formed over said substrate surface and the anchor pads. Vias are formed through the first insulating layer. The vias are filled with a second metal layer making a connection to the anchor pads and the first insulating layer is covered in the bonding pad area with the second metal layer. It is important that the via holes have a smaller cross sectional area than the anchor pads so that the combination of the anchor pads and the second metal form small "hooks" into the first insulating layer that hold the second metal (bonding pad layer) to the underlying layer.
Bibliography:Application Number: US19950549629