Method of manufacturing a gate structure for a metal semiconductor field effect transistor
A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory c...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
18.11.1997
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory contact to the substrate (11), and the source and drain regions (26) are self-aligned to the gate structure (19). Semiconductor devices manufactured using methods in accordance with the present invention are observed to have a higher breakdown voltage and a higher transconductance, among other improved electrical performance characteristics. |
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Bibliography: | Application Number: US19950523710 |