Method of manufacturing a gate structure for a metal semiconductor field effect transistor

A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory c...

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Bibliographic Details
Main Authors MARTINEZ; MARINO J, KLINGBEIL, JR.; LAWRENCE S
Format Patent
LanguageEnglish
Published 18.11.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory contact to the substrate (11), and the source and drain regions (26) are self-aligned to the gate structure (19). Semiconductor devices manufactured using methods in accordance with the present invention are observed to have a higher breakdown voltage and a higher transconductance, among other improved electrical performance characteristics.
Bibliography:Application Number: US19950523710