Integrated monolithic laser-modulator component with multiple quantum well structure

An integrated monolithic laser-modulator component having a multiple quantum well structure. This component includes an InP substrate, a laser (L) formed from a stack of semiconductor layers epitaxied on the substrate, including an active and absorbent layer and a periodic Bragg grating fixing the e...

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Bibliographic Details
Main Authors OUGAZZADEN; ABDALLAH, RAMDANE; ABDERRAHIM, DEVAUX; FABRICE
Format Patent
LanguageEnglish
Published 21.10.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated monolithic laser-modulator component having a multiple quantum well structure. This component includes an InP substrate, a laser (L) formed from a stack of semiconductor layers epitaxied on the substrate, including an active and absorbent layer and a periodic Bragg grating fixing the emission wavelength of the laser to a value slightly above an optimum wavelength of the laser gain peak. An electrooptical modulator (M) is formed from the same stack of semiconductor layers, with the exception of the Bragg grating, the active layer of the laser and the absorbing layer of the modulator being formed by the same epitaxied structure having several constrained or unconstrained quantum wells, the modulator functioning according to a confined Stark effect. The semiconductor layers of the laser and those of the modulator are electrically controlled.
Bibliography:Application Number: US19960735490