Capacitor over bitline DRAM cell

A DRAM array (100) having reduced bitline capacitance. The DRAM cell includes a pass transistor and a storage capacitor (150). An isolation structure (108) surrounds the DRAM cell. The bitline (140) is connected to a source/drain region (120b) of the pass transistor using a first polysilicon plug (1...

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Bibliographic Details
Main Authors TENG; CLARENCE W, LIU; JIANN
Format Patent
LanguageEnglish
Published 23.09.1997
Edition6
Subjects
ELECTRICITY
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Summary:A DRAM array (100) having reduced bitline capacitance. The DRAM cell includes a pass transistor and a storage capacitor (150). An isolation structure (108) surrounds the DRAM cell. The bitline (140) is connected to a source/drain region (120b) of the pass transistor using a first polysilicon plug (112). A second polysilicon plug (110) connects the storage capacitor (150) to the other source/drain region (120a&c) of the pass transistor. Both polysilicon plugs (110, 112) extend through an interlevel dielectric layer (116) to one of the source/drain region (120a-c) of the pass transistor, but neither extends over the isolation structure (108). If desired, either the storage capacitor (150) or the bitline (140) may be offset from the source/drain regions (120a-c).
Bibliography:Application Number: US19960670079