Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur

In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H2S plasma. Following the exposure, the cl...

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Bibliographic Details
Main Authors HOBSON; WILLIAM SCOTT, REN; FAN, SCHNOES; MELINDA LAMONT, CHAKRABARTI; UTPAL KUMAR
Format Patent
LanguageEnglish
Published 16.09.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H2S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.
Bibliography:Application Number: US19960692834