TaN/NiFe/TaN anisotropic magnetic sensor element

A stack of two refractory nitride layers and a magnetoresistive layer are used to facilitate electrical connection between components of a sensor. The stack of tantalum nitride and nickel iron layers are disposed over a silicide layer that is, in turn, disposed on a diffusion of conductive material...

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Bibliographic Details
Main Author HAJI-SHEIKH; MICHAEL J
Format Patent
LanguageEnglish
Published 16.09.1997
Edition6
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A stack of two refractory nitride layers and a magnetoresistive layer are used to facilitate electrical connection between components of a sensor. The stack of tantalum nitride and nickel iron layers are disposed over a silicide layer that is, in turn, disposed on a diffusion of conductive material within the body of a silicon layer. A titanium tungsten layer is disposed on the stack and below a subsequent layer of a conductive metal such as aluminum. A silicon nitride passivation layer is disposed over all of the other layers.
Bibliography:Application Number: US19950527471