Monitoring and controlling plasma processes via optical emission using principal component analysis

A method of monitoring the status of plasma in a chamber using real-time spectral data while conducting an etch process during the course of manufacturing of semiconductor wafers. Spectral data is collected during etching, with the spectral data characterizing an emission of light from etch species...

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Bibliographic Details
Main Authors CHOU; PAUL BAO-LUO, LEE; ANTONIO ROGELIO, ANGELL; DAVID, STURZENBECKER; MARTIN CLARENCE
Format Patent
LanguageEnglish
Published 19.08.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:A method of monitoring the status of plasma in a chamber using real-time spectral data while conducting an etch process during the course of manufacturing of semiconductor wafers. Spectral data is collected during etching, with the spectral data characterizing an emission of light from etch species contained in the plasma, and maintaining the collected data as reference data. A model of principal components of the data is generated. Additional spectral data is extracted from the plasma and compared with the model. Discrepancies pinpoint the presence of foreign material faults and help determine the cause of the failures to ensure appropriate corrective action.
Bibliography:Application Number: US19950563172