Random access memory cell resistant to radiation induced upsets

A radiation resistant random access memory cell which has a coupling circuit between a storage node of a first CMOS pair and a gate node of a second CMOS pair. The coupling circuit is controlled by a word line and provides a first resistive element between the storage node and the body of the coupli...

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Bibliographic Details
Main Authors FECHNER; PAUL S, DOUGAL; GREGOR D, GOLKE; KEITH W
Format Patent
LanguageEnglish
Published 20.05.1997
Edition6
Subjects
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INFORMATION STORAGE
PHYSICS
STATIC STORES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Summary:A radiation resistant random access memory cell which has a coupling circuit between a storage node of a first CMOS pair and a gate node of a second CMOS pair. The coupling circuit is controlled by a word line and provides a first resistive element between the storage node and the body of the coupling circuit and a second resistive element between the gate node and the body of the coupling circuit.
Bibliography:Application Number: US19960587065