Semiconductor device having a lead including aluminum

• Main Authors: MURAKAMI; AKANE, CUI; BAOCHUN, MIYAZAKI; MINORU, YAMAMOTO; MUTSUO
• Format: Patent
• Language: English
• Published: 22.04.1997
• Edition: 6
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LABELS OR NAME-PLATES; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 ANGSTROM , e.g., between 100 and 750 ANGSTROM . A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.