Magnetoresistive film

• Main Authors: KUME; MINORU, TANUMA; TOSHIO
• Format: Patent
• Language: English
• Published: 15.04.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INDUCTANCES; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETS; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; METALLURGY; PHYSICS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING; TRANSFORMERS

A magnetoresistive film includes, arranged in the following order, a substrate, a first ferromagnetic layer, a non-magnetic metal film, and a second ferromagnetic layer which has a coercive force different from that of the first ferromagnetic layer. The magnetoresistive film has an uneven number of inflection point(s) in its magnetization hysteresis curve in the process of magnetization transition from a first saturation magnetization state to a second saturation magnetization state, with a magnetic field change quantity Hb and a magnetic field change quantity Ha being in the following relation:Ha/Hb</=1where Ha and Hb are respectively expressed as Ha=|H2-H0| and Hb=|H1-H0|, with H0, H1 and H2 respectively representing the magnetic field at the intermediate inflection point, the magnetic field corresponding to 95% of said first saturation magnetization, and the magnetic field corresponding to 95% of said second saturation magnetization after transition.