Tapered semiconductor laser oscillator

A semiconductor laser oscillator structure and method is described having a tapered gain region in one-half of a laser cavity and a confocal oscillator region in another half of the cavity. An aperture is formed between two pairs of cavity spoilers located between the two cavity halves. One pair of...

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Bibliographic Details
Main Authors KINTZER; EMILY S, CHINN; STEPHEN R, WALPOLE; JAMES N, MISSAGGIA; LEE J, WANG; CHRISTINE A
Format Patent
LanguageEnglish
Published 10.09.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor laser oscillator structure and method is described having a tapered gain region in one-half of a laser cavity and a confocal oscillator region in another half of the cavity. An aperture is formed between two pairs of cavity spoilers located between the two cavity halves. One pair of spoilers is provided for receiving light which is reflected off of an output facet back into the semiconductor and removing it from the gain region. The other pair of spoilers removes light reflected from a curved mirror surface formed at the end of the other laser cavity half.
Bibliography:Application Number: US19940222413